features ? high voltage operation : vds=28v ? high gain: 15db(typ.) at pout=40dbm(avg.) ? broad frequency range : 2100 to 2200mhz ? proven reliability description the FLL21E040IK is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. this device is target for high voltage, low current operation in digitally modul ated base station amplifiers. this product is ideally suited for w-cdma base station amplifiers while offering high gain, long term reliability and ease of use. absolute maximum ratings item symbol condition rating unit drain-source voltage v ds 32 v gate-source voltage v gs tc=25 o c -3 v total power dissipation p t 83.3 w storage temperature t stg -65 to +175 o c channel temperature t ch 200 o c electrical character istics (case temperature tc=25 o c) item symbol condition limit unit min. typ. max. pinch-off voltage v p v ds =5v i ds =150ma -0.1 -0.2 -0.5 v gate-source breakdown voltage v gso i gs =-1.5ma -5 - - v 3rd order intermodulation distortion im 3 v ds =28v - -35 -31 dbc power gain gp i ds(dc) =500ma 14.0 15.0 - db drain efficiency d pout=40dbm(avg.) - 26 - % adjacent channel leakage power ratio aclr note - -36 - dbc thermal resistance r th channel to case - 1.6 1.8 o c/w note 1 : im3 aclr and gain test condition as follows: im3 & gain : fo=2.1325ghz, f1=2.1475ghz w-cdma(3gpp3.4 12-00) bs-1 64ch non clipping modulation measured over 3.84mhz at fo-15mhz and fi+15mhz. aclr : fo=2.1325ghz w-cdma(3gpp3.4 12-00) bs-1 64ch non clipping modulation, measured over 3.84mhz at fo+/-5mhz. edition 1.2 mar 2004 1 recommended operating condition (case temperature tc=25 o c) item symbol condition limit unit dc input voltage v ds <28 v forward gate current i gf r g =2 ? <176 ma reverse gate current i gr r g =2 ? >-15.9 ma channel temperature t ch 155 o c FLL21E040IK high voltage - high power gaas fet
FLL21E040IK high voltage - high power gaas fet 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 2 2.05 2.1 2.15 2.2 2.25 2.3 frequency [ghz] output power [dbm] pin= 20dbm pin=25dbm pin= 30dbm pin= 35dbm p1db 26 28 30 32 34 36 38 40 42 44 46 48 101214161820222426283032343638 input pow er[dbm ] output power [dbm] 0 10 20 30 40 50 60 70 80 90 100 110 drain efficiency [%] pout drain efficiency -60 -55 -50 -45 -40 -35 -30 -25 20 22 24 26 28 30 32 34 36 38 40 42 output pow er [dbm] imd [dbc] 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 drain efficiency [%] im3 im5 drain efficiency -60 -55 -50 -45 -40 -35 -30 -25 20 22 24 26 28 30 32 34 36 38 40 42 output pow er [dbm] alcr [dbc] 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 drain efficiency [%] +/-5m hz +/-10mhz drain efficiency
FLL21E040IK s-parameters @v ds =28v, i ds =500ma, f=1.7 to 3 ghz s11 s22 2.0ghz 25 50 2.2 2.1 2.2 2.1 2.0g h z 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 100 10 s12 s21 0.6 0.4 12 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 2.0ghz 8 2.1 2.2 !freq(gh z s11(mag ) s11(ang) s21(mag ) s21(ang) s12(mag ) s12(ang) s22(mag ) s22(ang) 0.1 0.953 174.7 2.608 176.3 0.001 70.7 0.565 -153.1 0.2 0.889 171.9 4.640 130.1 0.002 65.7 0.851 -165.1 0.3 0.895 172.6 3.664 71.9 0.004 20.9 0.850 -178.9 0.4 0.931 169.8 2.268 39.5 0.002 22.6 0.838 177.2 0.5 0.938 166.2 1.511 20.1 0.002 10.9 0.855 173.8 1 0.948 149.4 0.614 -29.3 0.004 27.4 0.913 153.8 1.1 0.953 146.0 0.588 -37.3 0.005 32.1 0.906 149.7 1.2 0.952 142.3 0.597 -44.5 0.006 24.5 0.907 145.6 1.3 0.948 138.4 0.624 -52.9 0.006 31.8 0.907 141.3 1.4 0.944 133.8 0.689 -61.7 0.007 28.9 0.903 136.8 1.5 0.943 129.6 0.799 -72.1 0.009 13.0 0.889 131.4 1.6 0.920 124.8 0.964 -83.5 0.011 5.0 0.855 125.8 1.7 0.905 119.3 1.243 -97.0 0.014 -4.4 0.828 119.6 1.8 0.858 112.8 1.718 -114.1 0.018 -21.8 0.794 112.9 1.9 0.807 105.3 2.575 -136.9 0.026 -41.4 0.743 104.5 1.95 0.768 101.1 3.263 -151.0 0.030 -57.4 0.727 98.8 2 0.714 94.9 4.253 -168.2 0.038 -74.7 0.721 90.1 2.05 0.625 83.9 5.890 169.2 0.050 -97.1 0.722 73.3 2.1 0.388 59.6 8.431 135.3 0.066 -132.4 0.706 33.0 2.11 0.304 50.9 9.088 125.7 0.069 -141.9 0.698 19.4 2.12 0.199 38.9 9.530 115.7 0.072 -152.1 0.684 3.3 2.13 0.082 11.6 9.900 104.5 0.071 -163.8 0.665 -14.6 2.14 0.076 -116.4 9.952 92.4 0.073 -174.9 0.652 -35.0 2.15 0.204 -147.0 9.710 80.5 0.068 172.1 0.641 -55.9 2.16 0.328 -161.3 9.243 68.8 0.064 160.5 0.640 -76.1 2.17 0.438 -172.0 8.617 58.1 0.059 151.0 0.647 -94.5 2.18 0.523 179.6 7.824 48.7 0.051 140.7 0.662 -111.0 2.19 0.598 172.6 7.157 40.2 0.047 132.6 0.673 -124.3 2.2 0.648 166.5 6.453 32.8 0.040 124.9 0.691 -135.8 2.25 0.788 147.2 3.966 5.9 0.023 96.9 0.753 -171.7 2.3 0.836 137.6 2.609 -10.9 0.014 75.7 0.796 170.6 2.35 0.862 130.9 1.839 -24.0 0.010 64.0 0.828 159.6 2.4 0.877 126.5 1.364 -34.2 0.006 43.1 0.853 151.9 2.5 0.901 119.0 0.826 -49.5 0.003 10.9 0.883 141.3 2.6 0.910 112.6 0.558 -62.6 0.004 17.9 0.899 133.6 2.7 0.913 107.8 0.401 -73.0 0.002 -3.1 0.909 127.7 2.8 0.917 103.2 0.305 -81.7 0.001 -5.4 0.925 122.5 2.9 0.918 99.0 0.243 -90.1 0.002 -12.9 0.934 117.9 3 0.920 94.8 0.206 -96.9 0.002 -25.9 0.937 114.2
FLL21E040IK high voltage - high power gaas fet board layout r=3.5 t=0.6mm
FLL21E040IK high voltage - high power gaas fet
FLL21E040IK high voltage - high power gaas fet for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
